Introduction to 2n3053
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Introduction to 2n3053. It is an NPN bipolar junction transistor which is mainly designed for amplification and switching applications. It consists of P doped semiconductor that exists between the two N doped layers. I'll give you a brief details about this transistor so you don't have to go anywhere to finding information regarding this transistor. Let's get started.
Introduction to 2n3053
- 2n3053 is an NPN bipolar junction transistor which is mainly used for general purpose amplification and switching purpose.
- It consists of three terminals called emitter, base, and collector. and comes in TO-39 Metal Can Package.
- This NPN transistor exhibits low leakage current, high breakdown voltage and low capacity and beta value which are useful over a wide range of current.
- As it is an NPN transistor, so base will be positive with respect to emitter.
- Sometimes it is called current controlled device because small current at the base side is used to control large current at the emitter and collector side.
- It is called BJT(bipolar junction transistor) because conduction is done by the movement of both electrons and holes but majority charge carriers will be electrons.
- When we apply positive voltage at the base side, it gets biased and then it handles the current at the emitter and collector side.
- The ability of base to control number of electrons is used for amplification purpose.
- P terminal of the transistor is behaved like base and other two N terminals represent emitter and collector respectively.
- The emitter emits the electrons which are then controlled by base and collected by collector.
2n3053 Pinout
2n3053 is an NPN transistor which mainly consists of three terminals.
1: Emitter
2: Base
3: Collector
- Transistor action is triggered by the free movement of electrons from its base side.
- These free electrons act like a bridge between emitter and collector.
Circuit Diagram of 2n3053
The Circuit diagram of 2n3053 is shown in the figure below.
- In order to flow current from emitter to collector, base voltage must be positive with respect to emitter.
- The current at the emitter side is the sum of current at the base and collector side.
- Forward current gain is the ratio between collector current to base current and it is denoted by beta ß. Beta is a ratio between two current so it has no unit.
- This beta value is sometimes referred as an amplification factor i.e. it is used for amplification purpose.
- Beta value ranges between 20 and 1000 but standard value of beta is 200.
- Current gain of the transistor is represented by alpha a. It is a ratio between collector current and emitter current. Alpha value exists between 0.95 to 0.99 but most of the time alpha value is considered as unity.
Absolute Maximum Ratings of 2n3053
- Absolute maximum rating of 2n3053 is shown in the figure below.
- Collector-Base and Collector-Emitter voltages are 60V and 40V respectively.
- The maximum power it can dissipate is 5W.
- It is important to note that if stresses are exceeded from given absolute maximum ratings, they can damage the device.
- Also, if stresses are applied for extended period of time, they can effect the device overall reliability.
- This bipolar junction transistor mainly consists of silicon semiconductor that's the reason it is mostly referred as Switching Silicon Bipolar Transistor.
Main Difference between NPN and PNP transistors
- Main difference between NPN and PNP transistors are the charge carriers.
- In case of NPN transistor majority charge carriers are electrons while majority charge carriers are holes in case of PNP transistors.
- Most of the professional prefer NPN transistors over PNP transistors, because conduction through mobility of electron is better than mobility of holes.
Applications
- This transistor is mainly used for general purpose amplification.
- It is widely used as a simple switch. Actually, conduction starts between emitter and collector when voltage is applied at the base side. When there is no bias voltage at the base side, the switch will be OFF. If voltage is present at the base side, switch will be ON.
That's all for today. I try my best to give information sorted out in easy and small steps so you can easily digest the information without much effort. If you have any doubt or feeling skeptical about the working of this transistor you can ask me in the comment section below. I'll try my best to help you according to best of my expertise. We always love when you keep coming back for what we have to offer. Stay tuned!
Introduction to 2n2646
Hey Fellas! I always come with unique topics to whet your appetite with valuable information so you can excel in your relevant field. Today, I am going to unlock the details on the
Introduction to 2n2646. It is a uni-junction transistor which is mainly used in thyristor triggering circuits, sensing circuits, and pulse and timing circuits. It features low peak point current of about 5µA, and low emitter reverse current of 0.005µA and passivated surface for uniformity. Let's dive in the details of this transistor and explore what it does and what are its main applications? Let's get started.
Introduction to 2n2646
- 2n2646 is a three terminal semiconductor device that contains only one junction that behaves like an electrically controlled switch.
- This uni-junction transistor (UJT) can not be used as a linear amplifier but it is widely used in triggered oscillators, free-running oscillators, and pulse generation circuits of low frequencies.
- It is composed of n-type semiconductors where p-type material is embedded along its length that helps in fixing the parameter like intrinsic stand off ratio which can be denoted as ?.
- Typical uni-junction 2n2646 contains three terminals named as emitter(E), base 1(B1) and base 2(B2).
- Sometimes it is also referred as a double base diode.
- The base is composed of lightly doped n-type silicon. The emitter is heavily doped and contains p-type material.
- The name of the device is based on the single junction formed between n-type and p-type material.
- When the emitter is behaved as open-circuit, the resistance between B1 and B2 is called inter-base resistance.
- The emitter junction is closed to B2 than B1, so this device doesn't encompass a symmetrical structure.
- Only a fraction of current will flow from B1 to B2 when there is no potential difference between emitter and base terminals.
- However, if large voltage is applied at the emitter terminals then a very large current will flow from B1 to B2 which ultimately generates larger B2 output current.
- The structure of this UJT is quite similar to N-Type JFET, but the gate surface in N-Type JFET is much larger than the emitter junction in UJT.
- This UJT normally functions when emitter junction is forward biased while JFET normally functions when gate junction is reversed biased.
- It is also referred as a current controlled with negative resistance.
2n2646 Pinout
2n2646 is mainly composed of three terminals.
1: Emitter
2: Base1 (B1)
3: Base2 (B2)
- This 2n2646 is designed for industrial applications where circuit economy is taken into consideration.
- It is an ideal choice for firing circuits that are widely used in silicon controlled rectifiers.
Working of 2n2646
- When this device is triggered it allows the emitter current to increase until it is limited by the help of emitter power supply.
- It can be used as an oscillator because it exhibits a negative resistance.
- This UJT gets biased when positive voltage is applied between the two bases. It will cause a potential drop in the device.
- The current will start to flow from emitter to base region, when emitter voltage is exceeded one diode voltage above the voltage where diffusion of P-type material occurs.
- This additional current at the base region allows the resistance between emitter and B2 lead to decrease, hence overall improves the conductivity of the device.
- This resistance drop will make the emitter junction forward biased which helps in injecting the more current.
- This drop in resistance makes the device operate over negative resistance that's why it is useful for oscillator circuits.
Absolute Maximum Ratings
Absolute maximum ratings of 2n2646 is shown in the figure below.
- Stresses above than the given values can damage the device.
- Also if stresses are applied for extended period of time above normal operating values, they can effect the device reliability.
Electrical Characteristics
Electrical characteristics of 2n2646 are shown in the figure below.
- It is important to note that these electrical characteristics don't effect the performance of the transistor.
- The 2n2646 is mainly manufactured for the purpose where low peak point emitter current, and low emitter leakage current is required.
Applications
- 2n2646 is mainly used in pulse and timing circuits.
- It is a building block of thyristor triggering and sensing circuits.
- Free-running oscillators and pulse generation circuits with low frequencies use this UJT because it exhibits negative resistance.
That's all for today. I always try to sort out information into small steps so you can digest the information easily. I hope you have enjoyed the article and got a clear idea what this UJT does and what are its main applications? However, if still you feel skeptical or have any doubt you can ask me in the comment section below. I'll help you according to best of my expertise. Stay Tuned!