TIP122 Reference Tables
Search the TIP122 pin reference and manufacturer-referenced specification tables.
Pin reference
Signal names, electrical functions and connection guidance
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| Pin | Signal | Type | Function & connection |
|---|---|---|---|
| B | Base | Input of the first transistor in the Darlington pair.Connection guidanceUse a current-limiting base resistor and a defined off-state return. Two base-emitter junctions give a higher on voltage than a single transistor. | |
| C | Collector | Shared collector of the two internal NPN transistors.Connection guidanceConnect to the low side of the controlled load. The metal tab, shown as contact 4 in the drawing, is also collector. Insulate it from a grounded heatsink where necessary. | |
| E | Emitter | Output emitter and circuit return.Connection guidanceConnect to the common control and load ground. Front view with leads down: B1, C2, E3. |
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Device and package
A reviewed manufacturer reference
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| Parameter | Value | Conditions / notes |
|---|---|---|
| Selected device | onsemi TIP122G | Pb-free TO-220AB; 50 units per rail |
| Electrical reference | TIP120/D Rev. 10 | June 2024 |
| Package drawing | CASE 221A, style 1 | 2.54 mm lead pitch |
| Front pinout | 1 B · 2 C · 3 E | Tab/contact 4 is collector |
| Construction | Monolithic NPN Darlington | Built-in base-emitter shunt resistors |
| Complementary device | TIP127 | PNP; separate polarity and reference checks apply |
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TIP120 and TIP121 have lower collector-voltage ratings. Do not substitute their limits for TIP122.
Absolute maximum ratings
Individual stress limits
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| Parameter | Value | Conditions / notes |
|---|---|---|
| Collector-emitter / collector-base | 100 V / 100 V | VCEO / VCB |
| Emitter-base voltage | 5 V | Reverse stress limit |
| Continuous / peak collector current | 5 A / 8 A | Thermal and pulse constraints apply |
| Base current | 120 mA | Absolute maximum |
| Case-cooled dissipation | 65 W at TC = 25°C | Derate 0.52 W/°C above 25°C |
| Ambient dissipation | 2 W at TA = 25°C | Derate 0.016 W/°C above 25°C |
| Junction / storage range | −65 to +150°C | Absolute range |
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The 65 W rating requires a controlled case temperature; it is not a free-air rating.
Gain and on-state behavior
Pulsed test points at case 25°C
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| Parameter | Value | Conditions / notes |
|---|---|---|
| hFE at IC = 0.5 A | 1000 minimum | VCE = 3 V |
| hFE at IC = 3 A | 1000 minimum | VCE = 3 V |
| Typical gain headline | 2500 at IC = 4 A | Typical, not a guaranteed minimum |
| VCE(sat), IC 3 A / IB 12 mA | 2 V maximum | Forced ratio 250 |
| VCE(sat), IC 5 A / IB 20 mA | 4 V maximum | Forced ratio 250 |
| VBE(on) | 2.5 V maximum | IC = 3 A; VCE = 3 V |
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Pulsed tests use pulse width ≤ 300 µs and duty cycle ≤ 2%; do not assume these are thermally steady conditions.
Off-state and dynamic data
TIP122 conditions from the selected reference
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| Parameter | Value | Conditions / notes |
|---|---|---|
| ICEO | 0.5 mA maximum | VCE = 50 V; IB = 0 |
| ICBO | 0.2 mA maximum | VCB = 100 V; IE = 0 |
| IEBO | 2 mA maximum | VBE = 5 V; IC = 0 |
| Small-signal current gain | 4 minimum | IC 3 A; VCE 4 V; f 1 MHz |
| Output capacitance | 200 pF maximum | VCB 10 V; IE 0; f 0.1 MHz |
| Switching scope | General-purpose low-speed switching | Storage time depends on base drive and turn-off circuit |
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Leakage and stored charge matter when driving small loads or switching quickly.
Thermal and safe operating area
Current and voltage must be checked together
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| Parameter | Value | Conditions / notes |
|---|---|---|
| Junction-to-case resistance | 1.92°C/W maximum | RθJC |
| Junction-to-ambient resistance | 62.5°C/W maximum | RθJA |
| Active-region SOA | Use the manufacturer’s curves | Second breakdown can limit operation before the power rating |
| Pulse operation | Use transient thermal impedance | Pulse width, duty cycle and starting temperature matter |
| Collector tab | Electrically live | Add insulation if the heatsink must be at another potential |
| Flyback clamp | Required for inductive switching | Do not rely on the internal Darlington resistors as a load clamp |
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The example uses a resistor so the circuit can be understood without an inductive switching transient.
12 V resistor-load switch
Explicit control and load values
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| Parameter | Value | Conditions / notes |
|---|---|---|
| Load | 100 Ω, at least 2 W | From +12 V to collector pin 2 |
| Base resistor | 1 kΩ from 5 V buffered control | Into base pin 1 |
| Pull-down | 10 kΩ from base to emitter | Defines the external off-state path |
| Emitter pin 3 | Common ground | Control and load return |
| Illustrative junction assumptions | VBE = 1.4 V; VCE = 1.0 V | Not guaranteed manufacturer test points |
| Control-source requirement | Approximately 3.6 mA | Verify the selected controller or buffer |
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Check the actual operating point and thermal margins before choosing a real load.
Example calculations
Nominal illustrative arithmetic
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| Parameter | Value | Conditions / notes |
|---|---|---|
| Drive-resistor current | 3.60 mA | (5 − 1.4) / 1 kΩ |
| External pull-down current | 0.14 mA | 1.4 / 10 kΩ |
| Device base-terminal current | 3.46 mA | 3.60 − 0.14 mA; internal paths are part of the device |
| Collector current | 110 mA | (12 − 1.0) / 100 Ω |
| Forced current ratio | Approximately 31.8 | 110 / 3.46 |
| Device power | Approximately 0.115 W | 1.0 × 0.110 + 1.4 × 0.00346 |
| Load-resistor loss | 1.21 W | (0.110 A)² × 100 Ω |
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These calculations are teaching values, not measured readings or a timed simulation.
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