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N-channel power MOSFET

IRF3205 Reference Tables

Search the IRF3205 pin reference and manufacturer-referenced specification tables.

Package view
Selected packageTO-220ABIRF3205PbF
Physical connections3 pinsPackage-specific numbering
Reference collection7 tables38 parameters & pin functions

Pin reference

Signal names, electrical functions and connection guidance

TO-220AB
Physical pin numbers3 pins

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IRF3205 pin functions and connections
PinSignalTypeFunction & connection
GGateInsulated control terminal that must be charged and discharged.
Connection guidance

Use a gate driver, series resistor and gate-to-source pull-down.

Threshold is 2–4 V at only 250 µA. The 8 mΩ maximum on-resistance is specified at 10 V gate drive and 62 A, not at 3.3 V logic.

DDrainConnects to the controlled load in a low-side N-channel switch.
Connection guidance

Place the load between its positive supply and drain pin 2.

The exposed metal tab is drain. The body diode has its cathode at drain.

SSourceReturn terminal and reference for gate voltage.
Connection guidance

Connect to common ground in the pictured low-side circuit.

The body diode has its anode at source. Keep the driver return close to this terminal.

TO-220AB · Front view · G1, D2, S3 · tab = D · Select a pin number to open its interactive pinout.

Device and package scope

Two manufacturer-hosted references

Manufacturer-referenced values5 parameters

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ParameterValueConditions / notes
Through-holeIRF3205PbF · TO-220ABRev. 2.1 · 21 July 2026
Surface-mountIRF3205SPbF · D2PAKPD95106 · 11 March 2004
Physical terminalsG1 · D2 · S3Tab and thermal pad are electrically drain
Gate driveRDS(on) specified at 10 VNo guaranteed 3.3 V / 5 V on-resistance in these references
MountingThrough-hole or surface-mount as selectedDo not surface-mount the TO-220 leads as if they were D2PAK

Review exact orderable availability separately from this reference.

Absolute ratings and current limits

Case temperature and pulse conditions matter

Manufacturer-referenced values8 parameters

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ParameterValueConditions / notes
Drain-source breakdown55 V minimumVGS 0 V; ID 250 µA
Continuous current at 25 / 100°C case110 / 80 AVGS 10 V; apply package limit and SOA
Package current limit75 A110 A is calculated from junction temperature; package limit remains binding
Pulsed drain current390 APulse width limited by junction temperature
Case-cooled power200 WCase at 25°C
Power derating1.3 W/°CAbove 25°C case temperature
Gate-source limit±20 VAbsolute maximum
Junction / storage−55 to +175°CAbsolute ranges

Do not combine individual maximum ratings into one operating point.

Static electrical characteristics

25°C; pulse ≤400 µs and duty ≤2% where specified

Manufacturer-referenced values6 parameters

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ParameterValueConditions / notes
On-resistance8 mΩ maximumVGS 10 V; ID 62 A
Gate threshold2–4 VVDS = VGS; ID 250 µA
Transconductance44 S minimumVDS 25 V; ID 62 A
Drain leakage25 µA maximumVDS 55 V; VGS 0 V
Hot drain leakage250 µA maximumVDS 44 V; VGS 0 V; TJ 150°C
Gate leakage±100 nA maximumVGS ±20 V

Temperature-dependent resistance must be considered in a real load stage.

Gate charge and switching

Explicit driver and load test conditions

Manufacturer-referenced values4 parameters

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ParameterValueConditions / notes
Qg / Qgs / Qgd146 / 35 / 54 nC maximumID 62 A; VDS 44 V; VGS 10 V
Delay-on / rise / delay-off / fall14 / 101 / 50 / 65 ns typicalVDD 28 V; ID 62 A; RG 4.5 Ω; VGS 10 V
Ciss / Coss / Crss3247 / 781 / 211 pF typicalVGS 0 V; VDS 25 V; 1 MHz
Drive requirementSource and sink gate chargeA threshold voltage does not describe gate-drive current

Different gate resistance and load conditions produce different switching waveforms.

Body diode and thermal path

Selected references use separate ambient conditions

Manufacturer-referenced values8 parameters

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ParameterValueConditions / notes
Body diodeAnode source; cathode drainIntrinsic reverse-current path
Forward drop1.3 V maximumIS 62 A; VGS 0 V; TJ 25°C
Recovery time typical / maximum69 / 104 nsIF 62 A; di/dt 100 A/µs
Recovery charge typical / maximum143 / 215 nCSame recovery conditions
Junction-to-case0.75°C/W maximumBoth selected references
TO-220 junction-to-ambient62°C/W maximumManufacturer reference condition
D2PAK junction-to-ambient40°C/W maximumMounted on 1-inch-square FR-4 / G-10 PCB
Case-to-sink0.50°C/W typicalTO-220 flat, greased interface

A case-cooled power rating is not a free-air rating.

12 V load switch and calculations

Illustrative constant-resistance model

Manufacturer-referenced values7 parameters

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ParameterValueConditions / notes
Load / source return100 Ω, at least 3 W / common groundSupply to drain; source to ground
Gate driver0 / 12 V push-pull output100 Ω series gate resistor; 100 kΩ gate-source pull-down
Steady gate voltageAbout 11.99 VDivider included; ideal driver and negligible leakage
Channel resistance8 mΩTeaching model using the published 25°C maximum test point
Load current / channel drop119.99 mA / 0.96 mV12/(100+RDS); I × RDS
Channel / load loss0.115 mW / 1.440 WI²R; switching and hot-resistance losses omitted
Inductive loadNeeds its own flyback pathThe pictured resistor is not an inductive load

These are calculated values, not measured or live simulation readings.

Read each value with its conditions

Typical values describe the stated test conditions. Absolute maximum ratings are stress limits, not operating targets.

Infineon Technologies · IRF3205PbF · Rev. 2.1 · 21 July 2026
Official PDF datasheet

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