IRF3205 Reference Tables
Search the IRF3205 pin reference and manufacturer-referenced specification tables.
Pin reference
Signal names, electrical functions and connection guidance
Scroll within the table to see all columns and rows.
| Pin | Signal | Type | Function & connection |
|---|---|---|---|
| G | Gate | Insulated control terminal that must be charged and discharged.Connection guidanceUse a gate driver, series resistor and gate-to-source pull-down. Threshold is 2–4 V at only 250 µA. The 8 mΩ maximum on-resistance is specified at 10 V gate drive and 62 A, not at 3.3 V logic. | |
| D | Drain | Connects to the controlled load in a low-side N-channel switch.Connection guidancePlace the load between its positive supply and drain pin 2. The exposed metal tab is drain. The body diode has its cathode at drain. | |
| S | Source | Return terminal and reference for gate voltage.Connection guidanceConnect to common ground in the pictured low-side circuit. The body diode has its anode at source. Keep the driver return close to this terminal. |
No pins match these filters. Try another signal name or reset the filters.
Device and package scope
Two manufacturer-hosted references
Scroll within the table to see all columns and rows.
| Parameter | Value | Conditions / notes |
|---|---|---|
| Through-hole | IRF3205PbF · TO-220AB | Rev. 2.1 · 21 July 2026 |
| Surface-mount | IRF3205SPbF · D2PAK | PD95106 · 11 March 2004 |
| Physical terminals | G1 · D2 · S3 | Tab and thermal pad are electrically drain |
| Gate drive | RDS(on) specified at 10 V | No guaranteed 3.3 V / 5 V on-resistance in these references |
| Mounting | Through-hole or surface-mount as selected | Do not surface-mount the TO-220 leads as if they were D2PAK |
No specifications match. Try a parameter name or a unit.
Review exact orderable availability separately from this reference.
Absolute ratings and current limits
Case temperature and pulse conditions matter
Scroll within the table to see all columns and rows.
| Parameter | Value | Conditions / notes |
|---|---|---|
| Drain-source breakdown | 55 V minimum | VGS 0 V; ID 250 µA |
| Continuous current at 25 / 100°C case | 110 / 80 A | VGS 10 V; apply package limit and SOA |
| Package current limit | 75 A | 110 A is calculated from junction temperature; package limit remains binding |
| Pulsed drain current | 390 A | Pulse width limited by junction temperature |
| Case-cooled power | 200 W | Case at 25°C |
| Power derating | 1.3 W/°C | Above 25°C case temperature |
| Gate-source limit | ±20 V | Absolute maximum |
| Junction / storage | −55 to +175°C | Absolute ranges |
No specifications match. Try a parameter name or a unit.
Do not combine individual maximum ratings into one operating point.
Static electrical characteristics
25°C; pulse ≤400 µs and duty ≤2% where specified
Scroll within the table to see all columns and rows.
| Parameter | Value | Conditions / notes |
|---|---|---|
| On-resistance | 8 mΩ maximum | VGS 10 V; ID 62 A |
| Gate threshold | 2–4 V | VDS = VGS; ID 250 µA |
| Transconductance | 44 S minimum | VDS 25 V; ID 62 A |
| Drain leakage | 25 µA maximum | VDS 55 V; VGS 0 V |
| Hot drain leakage | 250 µA maximum | VDS 44 V; VGS 0 V; TJ 150°C |
| Gate leakage | ±100 nA maximum | VGS ±20 V |
No specifications match. Try a parameter name or a unit.
Temperature-dependent resistance must be considered in a real load stage.
Gate charge and switching
Explicit driver and load test conditions
Scroll within the table to see all columns and rows.
| Parameter | Value | Conditions / notes |
|---|---|---|
| Qg / Qgs / Qgd | 146 / 35 / 54 nC maximum | ID 62 A; VDS 44 V; VGS 10 V |
| Delay-on / rise / delay-off / fall | 14 / 101 / 50 / 65 ns typical | VDD 28 V; ID 62 A; RG 4.5 Ω; VGS 10 V |
| Ciss / Coss / Crss | 3247 / 781 / 211 pF typical | VGS 0 V; VDS 25 V; 1 MHz |
| Drive requirement | Source and sink gate charge | A threshold voltage does not describe gate-drive current |
No specifications match. Try a parameter name or a unit.
Different gate resistance and load conditions produce different switching waveforms.
Body diode and thermal path
Selected references use separate ambient conditions
Scroll within the table to see all columns and rows.
| Parameter | Value | Conditions / notes |
|---|---|---|
| Body diode | Anode source; cathode drain | Intrinsic reverse-current path |
| Forward drop | 1.3 V maximum | IS 62 A; VGS 0 V; TJ 25°C |
| Recovery time typical / maximum | 69 / 104 ns | IF 62 A; di/dt 100 A/µs |
| Recovery charge typical / maximum | 143 / 215 nC | Same recovery conditions |
| Junction-to-case | 0.75°C/W maximum | Both selected references |
| TO-220 junction-to-ambient | 62°C/W maximum | Manufacturer reference condition |
| D2PAK junction-to-ambient | 40°C/W maximum | Mounted on 1-inch-square FR-4 / G-10 PCB |
| Case-to-sink | 0.50°C/W typical | TO-220 flat, greased interface |
No specifications match. Try a parameter name or a unit.
A case-cooled power rating is not a free-air rating.
12 V load switch and calculations
Illustrative constant-resistance model
Scroll within the table to see all columns and rows.
| Parameter | Value | Conditions / notes |
|---|---|---|
| Load / source return | 100 Ω, at least 3 W / common ground | Supply to drain; source to ground |
| Gate driver | 0 / 12 V push-pull output | 100 Ω series gate resistor; 100 kΩ gate-source pull-down |
| Steady gate voltage | About 11.99 V | Divider included; ideal driver and negligible leakage |
| Channel resistance | 8 mΩ | Teaching model using the published 25°C maximum test point |
| Load current / channel drop | 119.99 mA / 0.96 mV | 12/(100+RDS); I × RDS |
| Channel / load loss | 0.115 mW / 1.440 W | I²R; switching and hot-resistance losses omitted |
| Inductive load | Needs its own flyback path | The pictured resistor is not an inductive load |
No specifications match. Try a parameter name or a unit.
These are calculated values, not measured or live simulation readings.
No matching rowsTry a pin name, parameter, unit or test condition, or reset the filters.