BETADrain breakdown55 V · minimum
N-channel power MOSFET
IRF3205 Specifications
Review IRF3205 electrical specifications, operating conditions and package details.
Package view
Key specifications
Use a suitable gate driver: 8 mΩ is specified at VGS 10 V, not at the threshold. Check safe operating area, actual cooling and transient gate current.
On-resistance max.8 mΩ · VGS = 10 V
Package current ceiling75 A · thermal/SOA limits also apply
Junction limit175 °C · absolute
Package details
IRF3205PbF · TO-220AB
| Property | Details |
|---|---|
| Manufacturer | Infineon Technologies |
| Part number | IRF3205PbF |
| Package | TO-220AB |
| Connections | 3 pins |
| Mounting | Through-hole |
| Lead pitch | 2.54 mm |
| Package code | TO-220 |
| Thermal reference | 200 W at case 25°C; not a free-air rating |
Device and package scope
Two manufacturer-hosted references
Manufacturer specifications 5 parameters
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| Parameter | Value | Conditions / notes |
|---|---|---|
| Through-hole | IRF3205PbF · TO-220AB | Rev. 2.1 · 21 July 2026 |
| Surface-mount | IRF3205SPbF · D2PAK | PD95106 · 11 March 2004 |
| Physical terminals | G1 · D2 · S3 | Tab and thermal pad are electrically drain |
| Gate drive | RDS(on) specified at 10 V | No guaranteed 3.3 V / 5 V on-resistance in these references |
| Mounting | Through-hole or surface-mount as selected | Do not surface-mount the TO-220 leads as if they were D2PAK |
No specifications match. Try a parameter name or a unit.
Review exact orderable availability separately from this reference.
Absolute ratings and current limits
Case temperature and pulse conditions matter
Manufacturer specifications 8 parameters
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| Parameter | Value | Conditions / notes |
|---|---|---|
| Drain-source breakdown | 55 V minimum | VGS 0 V; ID 250 µA |
| Continuous current at 25 / 100°C case | 110 / 80 A | VGS 10 V; apply package limit and SOA |
| Package current limit | 75 A | 110 A is calculated from junction temperature; package limit remains binding |
| Pulsed drain current | 390 A | Pulse width limited by junction temperature |
| Case-cooled power | 200 W | Case at 25°C |
| Power derating | 1.3 W/°C | Above 25°C case temperature |
| Gate-source limit | ±20 V | Absolute maximum |
| Junction / storage | −55 to +175°C | Absolute ranges |
No specifications match. Try a parameter name or a unit.
Do not combine individual maximum ratings into one operating point.
Static electrical characteristics
25°C; pulse ≤400 µs and duty ≤2% where specified
Manufacturer specifications 6 parameters
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| Parameter | Value | Conditions / notes |
|---|---|---|
| On-resistance | 8 mΩ maximum | VGS 10 V; ID 62 A |
| Gate threshold | 2–4 V | VDS = VGS; ID 250 µA |
| Transconductance | 44 S minimum | VDS 25 V; ID 62 A |
| Drain leakage | 25 µA maximum | VDS 55 V; VGS 0 V |
| Hot drain leakage | 250 µA maximum | VDS 44 V; VGS 0 V; TJ 150°C |
| Gate leakage | ±100 nA maximum | VGS ±20 V |
No specifications match. Try a parameter name or a unit.
Temperature-dependent resistance must be considered in a real load stage.
Gate charge and switching
Explicit driver and load test conditions
Manufacturer specifications 4 parameters
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| Parameter | Value | Conditions / notes |
|---|---|---|
| Qg / Qgs / Qgd | 146 / 35 / 54 nC maximum | ID 62 A; VDS 44 V; VGS 10 V |
| Delay-on / rise / delay-off / fall | 14 / 101 / 50 / 65 ns typical | VDD 28 V; ID 62 A; RG 4.5 Ω; VGS 10 V |
| Ciss / Coss / Crss | 3247 / 781 / 211 pF typical | VGS 0 V; VDS 25 V; 1 MHz |
| Drive requirement | Source and sink gate charge | A threshold voltage does not describe gate-drive current |
No specifications match. Try a parameter name or a unit.
Different gate resistance and load conditions produce different switching waveforms.
Body diode and thermal path
Selected references use separate ambient conditions
Manufacturer specifications 8 parameters
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| Parameter | Value | Conditions / notes |
|---|---|---|
| Body diode | Anode source; cathode drain | Intrinsic reverse-current path |
| Forward drop | 1.3 V maximum | IS 62 A; VGS 0 V; TJ 25°C |
| Recovery time typical / maximum | 69 / 104 ns | IF 62 A; di/dt 100 A/µs |
| Recovery charge typical / maximum | 143 / 215 nC | Same recovery conditions |
| Junction-to-case | 0.75°C/W maximum | Both selected references |
| TO-220 junction-to-ambient | 62°C/W maximum | Manufacturer reference condition |
| D2PAK junction-to-ambient | 40°C/W maximum | Mounted on 1-inch-square FR-4 / G-10 PCB |
| Case-to-sink | 0.50°C/W typical | TO-220 flat, greased interface |
No specifications match. Try a parameter name or a unit.
A case-cooled power rating is not a free-air rating.
12 V load switch and calculations
Illustrative constant-resistance model
Manufacturer specifications 7 parameters
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| Parameter | Value | Conditions / notes |
|---|---|---|
| Load / source return | 100 Ω, at least 3 W / common ground | Supply to drain; source to ground |
| Gate driver | 0 / 12 V push-pull output | 100 Ω series gate resistor; 100 kΩ gate-source pull-down |
| Steady gate voltage | About 11.99 V | Divider included; ideal driver and negligible leakage |
| Channel resistance | 8 mΩ | Teaching model using the published 25°C maximum test point |
| Load current / channel drop | 119.99 mA / 0.96 mV | 12/(100+RDS); I × RDS |
| Channel / load loss | 0.115 mW / 1.440 W | I²R; switching and hot-resistance losses omitted |
| Inductive load | Needs its own flyback path | The pictured resistor is not an inductive load |
No specifications match. Try a parameter name or a unit.
These are calculated values, not measured or live simulation readings.
Connections by function
Select a pin for its function, connection guidance and electrical notes.