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PC817Phototransistor optocoupler

Pass the signal with light. Keep the two circuits electrically separate.

Manufacturer-referenced

Sharp · PC817X1NSZ1B

DIP-4OP18002EN · January 2018 · selected rank A

PC817 is a four-pin optocoupler with an infrared LED and an NPN phototransistor inside one package. Light carries the signal across the insulating barrier; there is no internal conductive connection between the two sides. This page follows Sharp’s PC817X1 rank A parts in through-hole and gullwing SMD packages. Their current-transfer ratio is 80–160% at 5 mA LED current, 5 V collector-emitter voltage and 25°C; other PC817 grades have different ranges. A series resistor controls LED current, while a separate supply and pull-up create the output signal. The illustrated common-emitter circuit inverts the input and preserves separate input and output grounds.

3D View

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Real View

PC817 rank A Through-hole package with black body, silver leads and pin-one mark.
PC817X1NSZ1B · DIP-4Package illustration

Pinout

PC817DIP-4Top view · pin 1 at the marked corner
Select a pin to see its functionDIP-4 · 4 pins

PCB Footprint

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Finding DIP-4 packageTop view · mm
Infrared inputIsolated output
PC817DIP-4Top view · pin 1 at the marked corner

Click a lead or use the arrow keys. Top view · pin 1 at the marked corner

1
PIN 1 · Infrared input

A

LED anode

Function

Positive terminal of the internal infrared emitter. Forward current produces the light that controls the output transistor.

How to connect

Drive through a current-limiting resistor from the input circuit.

Electrical note

Select resistance from the input voltage and forward voltage; never connect directly across a voltage source.

At a glance

Phototransistor optocoupler

The infrared emitter drives a phototransistor through light. Input current, CTR, pull-up resistance and temperature determine the output behavior.

4 LED + phototransistorElectrical terminals
80–160 % · stated test conditionsSelected rank A CTR
−30–100 °C · derating appliesOperating ambient
5 kVrms · 1 minuteIsolation test

Operating profile

PC817X1NSZ1B

Selected package
DIP-4PC817X1NSZ1B
Illustrative LED drive
≈ 5 mA5 V through 750 Ω
Collector output
InvertingRequires an external pull-up

Selected devices and pinout

Key parameters and their test conditions

Through-hole part
PC817X1NSZ1BConditions / notes: Rank A · four-pin DIP
SMD part
PC817X1NIP1BConditions / notes: Rank A · SMT gullwing DIP, not SOP-4
Pin 1 / pin 2
Anode / cathodeConditions / notes: Input infrared LED
Pin 4 / pin 3
Collector / emitterConditions / notes: Output phototransistor
CTR for selected rank A
80–160%Conditions / notes: Calculated from 4–8 mA collector current at IF = 5 mA, VCE = 5 V, 25°C
Isolation test
5 kVrms for 1 minuteConditions / notes: 40–60% RH; not a continuous working-voltage rating

Package details

Follows the selected physical package

Manufacturer
Sharp
Part number
PC817X1NSZ1B
Package
DIP-4
Connections
4 pins
Mounting
Through-hole
Lead pitch
2.54 mm
Package code
DIP
Thermal reference
Derate LED, collector and total dissipation with ambient temperature

Connections by function

Select a pin to open its function, electrical notes and wiring guidance.

Infrared input2 pins

Isolated output2 pins

Turn current into light

Input current flows from anode to cathode through the internal infrared LED. The resistor limits that current.

Cross the insulating barrier

Photons reach the output transistor. No wire or shared ground is needed across the barrier.

Turn light into an output level

The transistor sinks current from the output pull-up. With the LED off, the pull-up restores a high level; with sufficient drive, the output goes low.

At an assumed LED drop of 1.2 V, a 5 V source through 750 Ω gives about 5.07 mA. A 3.3 V / 10 kΩ output needs only about 0.33 mA when low. This is an illustrative sizing calculation, not a guaranteed switching threshold or live measurement.

PC817 cutaway: anode1 and cathode2 feed infrared LED; light crosses insulating barrier toward NPN transistor with collector4 and emitter3.
Functional cutaway, not the physical die layout. Light arrows illustrate invisible infrared radiation.
5V_A through switch and750ohm resistor to PC817pin1; pin2 toGND_A. Separate3.3V_B through10kohm pull-up to pin4andMCUinput; pin3toGND_B. Grounds not connected.
Low-voltage teaching circuit. LED on pulls the output low when there is enough collector drive; LED off lets the pull-up restore high.

Pin reference

Select a pin to explore its function and connection.

4 pins
PinSignalTypeFunction
ALED anodePositive terminal of the internal infrared emitter. Forward current produces the light that controls the output transistor.
KLED cathodeNegative terminal of the infrared emitter.
EPhototransistor emitterEmitter of the isolated NPN phototransistor.
CPhototransistor collectorCollector of the isolated NPN phototransistor.
DIP-4 · Top view · pin 1 at the marked corner · Select a pin number to inspect its connection.

Selected devices and pinout

One gain grade · two lead forms

ParameterValueConditions / notes
Through-hole partPC817X1NSZ1BRank A · four-pin DIP
SMD partPC817X1NIP1BRank A · SMT gullwing DIP, not SOP-4
Pin 1 / pin 2Anode / cathodeInput infrared LED
Pin 4 / pin 3Collector / emitterOutput phototransistor
CTR for selected rank A80–160%Calculated from 4–8 mA collector current at IF = 5 mA, VCE = 5 V, 25°C
Isolation test5 kVrms for 1 minute40–60% RH; not a continuous working-voltage rating

Confirm the complete order code. PC817 variants and manufacturers need not have identical gain or limits.

Electrical characteristics

Sharp test conditions · 25°C

ParameterValueConditions / notes
LED forward voltage1.2 V typical; 1.4 V maximumIF = 20 mA
LED reverse current10 µA maximumVR = 4 V
Collector dark current100 nA maximumVCE = 50 V; IF = 0
Collector saturation voltage0.1 V typical; 0.2 V maximumIF = 20 mA; IC = 1 mA
Input capacitance30 pF typical; 250 pF maximumV = 0; f = 1 kHz
Input-output capacitance0.6 pF typical; 1.0 pF maximumV = 0; f = 1 MHz

Forward voltage varies with current and temperature. CTR measured at VCE = 5 V does not guarantee the same transfer in saturation.

Response and loading

Load-dependent phototransistor response

ParameterValueConditions / notes
Rise time4 µs typical; 18 µs maximumVCE = 2 V; IC = 2 mA; RL = 100 Ω
Fall time3 µs typical; 18 µs maximumSame response-time test
Cut-off frequency80 kHz typicalVCE = 5 V; IC = 2 mA; RL = 100 Ω; −3 dB
Output pull-upLower resistance demands more collector currentHigher resistance increases sensitivity to leakage and capacitance
Deep saturationCan slow turn-offAccount for stored charge in switching designs
High-speed protocolsUse a suitable logic-output isolator when neededThe 80 kHz test is not a guaranteed digital data rate

The example uses a 10 kΩ pull-up and therefore does not inherit the 100 Ω switching-time test results.

Isolated logic input

5 V input side · separate 3.3 V output side

ParameterValueConditions / notes
Input resistance750 ΩExample assumes an approximately 1.2 V LED drop
Estimated LED current5.07 mA(5 − 1.2) / 750
Input resistor dissipationApproximately 19.3 mWIF² × R; 0.125 W or greater nominal rating provides margin
Output pull-up10 kΩ to +3.3 V_BCollector pin 4 is the output node
Low-state pull-up currentUp to approximately 0.33 mA3.3 V / 10 kΩ, ignoring VCE(sat)
GroundsGND_A and GND_B stay separateNo conductive link across the optocoupler

Illustrative low-voltage circuit: verify CTR across temperature and life, logic thresholds, drive capability and switching speed for the actual design.

Absolute maximum ratings

Stress limits at 25°C unless specified

ParameterValueConditions / notes
Continuous LED current50 mADerate with ambient temperature
LED reverse voltage6 VAvoid reverse stress in normal operation
Collector-emitter voltage80 VLED off
Emitter-collector voltage6 VReverse output polarity limit
Collector current50 mAAlso limited by power dissipation and temperature
LED / collector / total dissipation70 / 150 / 200 mWAt 25°C; derating required
Operating / storage temperature−30–100°C / −55–125°CAmbient operation / unpowered storage

These are stress limits, not recommended continuous operating targets. Isolation-system design also depends on spacing, insulation and applicable standards.

Package and PCB geometry

Same electrical numbering in both packages

ParameterValueConditions / notes
Moulded body6.5 × 4.6 mm nominal3.5 mm nominal body height
Lead pitch2.54 mmAlong each two-pin row
DIP footprint7.62 mm row spacingTEP pattern: 1.00 mm holes and 1.80 mm pads
SMD footprint8.20 mm pad-row centresSharp reference pads: 2.20 × 1.70 mm
Pin 1 identificationAnode mark on bodySquare through-hole pad / top-left SMD mark
Board routingPreserve separation across the barrierAvoid copper that bypasses the intended isolation

Dimensions follow Sharp’s mechanical drawings; check the ordered lead form and your fabricator’s tolerances.

Power-supply feedback

Transfer an error signal across an isolation barrier with a suitable reference and loop-compensation circuit.

Manufacturer application guide

Take it into ProTech

Find PC817 in the Components Library to place its schematic symbol and connect its pins.

Reference page · circuit simulation model not yet availableOpen ProTech

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