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PNP Darlington power transistor

TIP127 Reference Tables

Search the TIP127 pin reference and manufacturer-referenced specification tables.

Package view
Selected packageTO-220ABTIP127G
Physical connections3 pinsPackage-specific numbering
Reference collection7 tables38 parameters & pin functions

Pin reference

Signal names, electrical functions and connection guidance

TO-220AB
Physical pin numbers3 pins

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TIP127 pin functions and connections
PinSignalTypeFunction & connection
BBaseInput of the first PNP in the Darlington pair.
Connection guidance

Sink base current through 1 kΩ; connect a 10 kΩ return from base to emitter.

The example driver selects 12 V for off and 7 V for on. A 3.3 V GPIO cannot directly turn off this 12 V high-side stage.

CCollectorCommon collector of the two internal PNP transistors.
Connection guidance

Connect the load between collector and ground.

The metal tab is electrically collector; keep heatsinks at a compatible potential or insulate them.

EEmitterPositive supply and base-drive reference.
Connection guidance

Connect to +12 V in the example.

Front-facing TO-220: B1, C2, E3. The DPAK tab is collector pad 2.

TO-220AB · Front view · B1, C2, E3 · tab = C · Select a pin number to open its interactive pinout.

Device and package scope

Two documented onsemi selections

Manufacturer-referenced values5 parameters

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ParameterValueConditions / notes
Through-holeTIP127G · TO-220ABTIP120/D Rev. 10, June 2024
Surface-mountMJD127T4G · DPAKMJD122/D Rev. 16, April 2026
ConnectionPNP Darlington · B1, C2, E3Metal tab/contact 4 is also collector
ConstructionTwo stages with internal shunt resistorsApproximately 8 kΩ / 120 Ω shown for TIP127
SMD relationshipDocumented replacement familyDifferent ratings and test points; not a footprint-compatible substitute

Electrical values below are magnitudes; PNP voltage and current signs reverse.

Absolute limits by package

Individual stress limits, not simultaneous targets

Manufacturer-referenced values5 parameters

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ParameterValueConditions / notes
Collector-emitter / collector-base100 / 100 VBoth selections
Emitter-base / base current5 V / 120 mABoth selections
TO-220 DC / peak collector5 / 8 AThermal and SOA restrictions apply
DPAK DC / peak collector8 / 16 ADifferent package and pulse conditions
Junction / storage−65 to +150°CBoth selections

Do not infer allowable load power from collector-current ratings.

TIP127 electrical characteristics

TC 25°C; pulse ≤300 µs, duty ≤2%

Manufacturer-referenced values7 parameters

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ParameterValueConditions / notes
hFE minimum1000IC 0.5 A or 3 A; VCE 3 V
VCE(sat) maximum2 V / 4 VIC 3 A / 5 A; IB 12 mA / 20 mA
VBE(on) maximum2.5 VIC 3 A; VCE 3 V
ICEO maximum0.5 mAVCE 50 V; base open
ICBO / IEBO maximum0.2 / 2 mAVCB 100 V / VBE 5 V
Small-signal gain minimum4IC 3 A; VCE 4 V; 1 MHz
Output capacitance maximum300 pFPNP; VCB 10 V; 0.1 MHz

Gain does not make the on-state voltage drop disappear.

MJD127 electrical characteristics

TC 25°C; separate SMD reference

Manufacturer-referenced values8 parameters

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ParameterValueConditions / notes
hFE1000–12000 at 4 A; ≥100 at 8 AVCE 4 V
VCE(sat) maximum2 V / 4 VIC 4 A / 8 A; IB 16 mA / 80 mA
VBE(on) maximum2.8 VIC 4 A; VCE 4 V
VBE(sat) maximum4.5 VIC 8 A; IB 80 mA; pulse ≤300 µs, duty ≤2%
ICEO / ICBO maximum10 / 10 µAVCE 50 V / VCB 100 V
IEBO maximum2 mAVBE 5 V; collector open
Small-signal gain minimum4 at 1 MHz; 300 at 1 kHzIC 3 A; VCE 4 V
Output capacitance maximum300 pFPNP; VCB 10 V; 0.1 MHz

Read each test condition before comparing the SMD and through-hole variants.

Thermal and safe operating area

Case and ambient limits are different

Manufacturer-referenced values6 parameters

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ParameterValueConditions / notes
TO-220 case / ambient power65 W / 2 WAt case / ambient 25°C; derate 0.52 / 0.016 W per °C
TO-220 RθJC / RθJA1.92 / 62.5°C/WMaximum
DPAK case / ambient power20 W / 1.75 WAt 25°C; derate 0.16 / 0.014 W per °C
DPAK RθJC / RθJA6.25 / 71.4°C/WSpecified minimum land pattern
Safe operating areaUse the selected manufacturer curvesSecond breakdown and pulse duration also matter
Inductive loadsUse a suitable external clampThe pictured resistor does not store magnetic energy

The model artwork is not a heatsink rating.

Positive-side resistor-load switch

Explicit illustrative assumptions

Manufacturer-referenced values7 parameters

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ParameterValueConditions / notes
Emitter / collector load+12 V / 100 Ω to groundUse at least a 2 W resistor with thermal margin
Buffered driver12 V off; 7 V onMust sink base current; referenced to the emitter supply
Base resistor / return1 kΩ / 10 kΩReturn goes to emitter, not ground
Assumed drops|VBE| 1.4 V; |VCE| 1 VTeaching assumptions, not guaranteed test points
Device base current3.46 mA(5−1.4)/1000−1.4/10000
Collector / forced current ratio110 mA / 31.8(12−1)/100; IC/IB
Device / load loss0.115 W / 1.21 WIncludes base contribution

Use a real level-shifted or buffered control stage; do not connect a low-voltage GPIO directly.

Read each value with its conditions

Typical values describe the stated test conditions. Absolute maximum ratings are stress limits, not operating targets.

onsemi · TIP120/D · Rev. 10 · June 2024
Official PDF datasheet

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