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Phototransistor optocoupler

PC817 Specifications

Review PC817 electrical specifications, operating conditions and package details.

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Key specifications

The infrared emitter drives a phototransistor through light. Input current, CTR, pull-up resistance and temperature determine the output behavior.

Electrical terminals4 LED + phototransistor
Selected rank A CTR80–160 % · stated test conditions
Operating ambient−30–100 °C · derating applies
Isolation test5 kVrms · 1 minute

Operating profile

Supply, signals and operating conditions

PC817 operating profile
ParameterValueConditions / notes
Selected packageDIP-4PC817X1NSZ1B
Illustrative LED drive≈ 5 mA5 V through 750 Ω
Collector outputInvertingRequires an external pull-up
Use these values with the stated grade and test conditions.

Package details

PC817X1NSZ1B · DIP-4

Selected package
Selected PC817 physical package
PropertyDetails
ManufacturerSharp
Part numberPC817X1NSZ1B
PackageDIP-4
Connections4 pins
MountingThrough-hole
Lead pitch2.54 mm
Package codeDIP
Thermal referenceDerate LED, collector and total dissipation with ambient temperature

Selected devices and pinout

One gain grade · two lead forms

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ParameterValueConditions / notes
Through-hole partPC817X1NSZ1BRank A · four-pin DIP
SMD partPC817X1NIP1BRank A · SMT gullwing DIP, not SOP-4
Pin 1 / pin 2Anode / cathodeInput infrared LED
Pin 4 / pin 3Collector / emitterOutput phototransistor
CTR for selected rank A80–160%Calculated from 4–8 mA collector current at IF = 5 mA, VCE = 5 V, 25°C
Isolation test5 kVrms for 1 minute40–60% RH; not a continuous working-voltage rating

Confirm the complete order code. PC817 variants and manufacturers need not have identical gain or limits.

Electrical characteristics

Sharp test conditions · 25°C

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ParameterValueConditions / notes
LED forward voltage1.2 V typical; 1.4 V maximumIF = 20 mA
LED reverse current10 µA maximumVR = 4 V
Collector dark current100 nA maximumVCE = 50 V; IF = 0
Collector saturation voltage0.1 V typical; 0.2 V maximumIF = 20 mA; IC = 1 mA
Input capacitance30 pF typical; 250 pF maximumV = 0; f = 1 kHz
Input-output capacitance0.6 pF typical; 1.0 pF maximumV = 0; f = 1 MHz

Forward voltage varies with current and temperature. CTR measured at VCE = 5 V does not guarantee the same transfer in saturation.

Response and loading

Load-dependent phototransistor response

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ParameterValueConditions / notes
Rise time4 µs typical; 18 µs maximumVCE = 2 V; IC = 2 mA; RL = 100 Ω
Fall time3 µs typical; 18 µs maximumSame response-time test
Cut-off frequency80 kHz typicalVCE = 5 V; IC = 2 mA; RL = 100 Ω; −3 dB
Output pull-upLower resistance demands more collector currentHigher resistance increases sensitivity to leakage and capacitance
Deep saturationCan slow turn-offAccount for stored charge in switching designs
High-speed protocolsUse a suitable logic-output isolator when neededThe 80 kHz test is not a guaranteed digital data rate

The example uses a 10 kΩ pull-up and therefore does not inherit the 100 Ω switching-time test results.

Isolated logic input

5 V input side · separate 3.3 V output side

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ParameterValueConditions / notes
Input resistance750 ΩExample assumes an approximately 1.2 V LED drop
Estimated LED current5.07 mA(5 − 1.2) / 750
Input resistor dissipationApproximately 19.3 mWIF² × R; 0.125 W or greater nominal rating provides margin
Output pull-up10 kΩ to +3.3 V_BCollector pin 4 is the output node
Low-state pull-up currentUp to approximately 0.33 mA3.3 V / 10 kΩ, ignoring VCE(sat)
GroundsGND_A and GND_B stay separateNo conductive link across the optocoupler

Illustrative low-voltage circuit: verify CTR across temperature and life, logic thresholds, drive capability and switching speed for the actual design.

Absolute maximum ratings

Stress limits at 25°C unless specified

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ParameterValueConditions / notes
Continuous LED current50 mADerate with ambient temperature
LED reverse voltage6 VAvoid reverse stress in normal operation
Collector-emitter voltage80 VLED off
Emitter-collector voltage6 VReverse output polarity limit
Collector current50 mAAlso limited by power dissipation and temperature
LED / collector / total dissipation70 / 150 / 200 mWAt 25°C; derating required
Operating / storage temperature−30–100°C / −55–125°CAmbient operation / unpowered storage

These are stress limits, not recommended continuous operating targets. Isolation-system design also depends on spacing, insulation and applicable standards.

Package and PCB geometry

Same electrical numbering in both packages

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ParameterValueConditions / notes
Moulded body6.5 × 4.6 mm nominal3.5 mm nominal body height
Lead pitch2.54 mmAlong each two-pin row
DIP footprint7.62 mm row spacingTEP pattern: 1.00 mm holes and 1.80 mm pads
SMD footprint8.20 mm pad-row centresSharp reference pads: 2.20 × 1.70 mm
Pin 1 identificationAnode mark on bodySquare through-hole pad / top-left SMD mark
Board routingPreserve separation across the barrierAvoid copper that bypasses the intended isolation

Dimensions follow Sharp’s mechanical drawings; check the ordered lead form and your fabricator’s tolerances.

Connections by function

Select a pin for its function, connection guidance and electrical notes.

Infrared input2 pins

Isolated output2 pins

Read the conditions with every value

Typical values describe stated test conditions. Absolute maximum ratings are stress limits, not operating targets.

Official PDF datasheet

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