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32-Mbit Dual/Quad SPI NOR flash

W25Q32JV Specifications

Review W25Q32JV electrical specifications, operating conditions and package details.

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Key specifications

A serial command engine feeds address decoders, a page-program buffer and the NOR cell array. Status bits report whether an internal program or erase cycle is still busy.

Storage32 Mbit · 4 MiB
Supply range2.7–3.6 V
Program page256 bytes
Industrial ambient−40–85 °C

Operating profile

Supply, signals and operating conditions

W25Q32JV operating profile
ParameterValueConditions / notes
Selected packagePDIP-8W25Q32JVDAIQ
Smallest erase unit4KiB sector
Fast-command ceiling133MHz at 3.0–3.6 V · command-dependent
Use these values with the stated grade and test conditions.

Package details

W25Q32JVDAIQ · PDIP-8

Selected package
Selected W25Q32JV physical package
PropertyDetails
ManufacturerWinbond Electronics
Part numberW25Q32JVDAIQ
PackagePDIP-8
Connections8 pins
MountingThrough-hole
Lead pitch2.54 mm
Package codePDIP-8
Thermal referenceSee operating and package limits

Memory organization

Binary sizes, addresses and boundaries

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ParameterValueConditions / notes
Capacity32 Mbit / 4,194,304 bytes4 MiB, not 32 megabytes
Address range0x000000–0x3FFFFF24-bit address field for normal array commands
Program page256 bytes16,384 pages
Sector erase4 KiB1,024 sectors
Block erase32 KiB or 64 KiB128 or 64 blocks respectively
Erased state0xFF per byteAll bits are ones
Programming direction1 → 0Erase required for 0 → 1
Page boundarySplit writes before itExcess program data wraps within the selected page

Plan data structures around erase units and power-loss recovery.

Common standard-SPI commands

MSB first; separate CS transaction for each command

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ParameterValueConditions / notes
Read JEDEC identification9FReturns EF 40 16 for the reviewed device
Read data03 + 24-bit addressNo dummy byte; clock ceiling 50 MHz
Fast read0B + address + dummy byteObserve supply-dependent fast-command limit
Write enable / disable06 / 04Sets / clears Write Enable Latch
Read status register 105BUSY bit0, WEL bit1
Page program02 + address + data1…256 bytes, without crossing a page
Erase 4 KiB sector20 + addressRequires Write Enable
Erase 32 / 64 KiB block52 / D8 + addressRequires Write Enable
Chip eraseC7 or 60Erases the entire array
Power-down / releaseB9 / ABObserve entry and recovery timing
Software reset sequence66 then 99Two command frames; allow reset recovery

Identification and read commands do not modify user memory. Programming, erasing and protection writes do.

Supply, logic and startup

Revision C selected industrial variants

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ParameterValueConditions / notes
Supply2.7–3.6 VExample: regulated 3.3 V
Industrial ambient−40 to +85°CI temperature grade
Input HIGH / LOW≥0.7×VCC / ≤0.3×VCCNot 5 V tolerant
Normal 03 read clockUp to 50 MHzAt specified supply range
Other supported command clocksUp to 133 MHzVCC=3.0–3.6 V; not every framing mode has identical throughput
Fast-command clock at 2.7–3.0 VUp to 104 MHzMeet AC timing and loading requirements
VCC valid to CS LOW20 µs minimumKeep CS HIGH during startup
Delay before write instruction5 ms minimumAfter power becomes valid
Local bypass100 nF in the exampleShort loop between VCC8 and GND4

The 1 MHz identification example is intentionally well below the speed ceiling.

Program, erase and recovery times

Typical values and maximum completion limits

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ParameterValueConditions / notes
Page program0.7 ms typical / 3 ms maximumPoll BUSY rather than delaying only the typical time
4 KiB sector erase45 ms typical / 400 ms maximumTarget erase unit only
32 KiB block erase120 ms typical / 1.6 s maximumLarger erase scope
64 KiB block erase150 ms typical / 2 s maximumLarger erase scope
Chip erase10 s typical / 50 s maximumEntire memory
Write status register10 ms typical / 15 ms maximumProtection/configuration operation
Power-down entry3 µs maximumAfter CS rises for B9
Release without ID read3 µs maximumWait before next instruction
Software-reset recovery30 µs minimumWait before next command

Retain supply throughout a modifying cycle; power interruption can leave the affected data incomplete.

Variant and package distinctions

Read the exact part suffix and revision

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ParameterValueConditions / notes
Q ordering optionQE=1 factory defaultQE is writable; Standard and Dual commands still available
Pin3 / pin7IO2 / IO3Quad data lanes; not /WP and /HOLD on this reference
Separate hardware RESETAbsent on these eight-lead packagesAvailable on specified larger packages
SOIC option shownSS, 208-mil body5.28 × 5.28 mm nominal body
PDIP option shownDA, 300-mil row format2.54 mm pitch
Other offered package familiesVSOP, WSON, XSON, SOIC16, TFBGANot interchangeable footprints; not all displayed here
OrderabilityCheck current manufacturer/distributor listingThis page identifies the source revision and selected package definitions

Do not blindly substitute another W25Q32 family or suffix.

Read the device identity

3.3 V host, mode 0, 1 MHz

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ParameterValueConditions / notes
Supply and groundVCC8 / GND43.3 V / common ground
SPI signalsCS1, DO2, DI5, CLK6Host CS, MISO, MOSI, SCLK
Defined idle nets10 kΩ pull-ups on CS, IO2 and IO3IO2/IO3 unused by this standard-SPI example
Transmit bytes9F 00 00 00CS LOW for the complete transfer
Receive bytesXX EF 40 16Discard response during opcode
After transferCS HIGHData output releases
InterpretationEF: Winbond; 40: type; 16: capacity codeExpected identification, not a measured live result

All logic is 3.3 V. Add level translation if the controller uses incompatible voltages.

Connections by function

Select a pin for its function, connection guidance and electrical notes.

Serial control2 pins

Data lanes4 pins

Ground1 pin

Supply1 pin

Read the conditions with every value

Typical values describe stated test conditions. Absolute maximum ratings are stress limits, not operating targets.

Official PDF datasheet

Component view