Introduction to 5n50

Introduction to 5n50

• 5n50 is an N-Channel MOSFET that comes in advanced DMOS, planer stripe technology.
• It is designed to achieve high switching performance. As it is an N-Channel MOSFET, so here conduction will be carried out by the movement of electrons.
• 5n50 usually consists of three terminals called source gate and drain. Conduction is achieved when electron emit from the source terminal and collected by the drain terminal.
• Conducting path between drain and source is called channel. Small positive voltage at the gate terminal is used to control the conduction between drain and source terminal.

• As we increase the initial input voltage at the gate terminal it will allow the conduction path between source and drain to increase, hence helps in increasing the overall conductivity of the channel.
• In this MOSFET, gate is practically isolated from drain and source and there lies an insulating layer between the gate and the body of the transistor. Sometimes it is referred as IGFET( Insulated Gate Field Effect Transistor), as gate is insulated and draws no current.

5n50 Pinout

• Voltage at the gate terminal is used to control the conduction between source and drain. And conduction is carried out by the movement of electrons.
• It comes in three different package named as TO-220, TO-252 and TO-262 receptively.
• All three types come with same characteristics but with different power dissipation values.

Working of 5n50

• As it is N-Channel MOSFET, so conduction will be done by the movement of electrons.
• In 5n50, the drain and source are composed of N type material while body and substrate is composed of P type material.
• The gate of this transistor is used composed of layer of poly-silicon.
• The addition of silicon dioxide on the layer of substrate gives the typical metal oxide semiconductor construction. MOS.
• The layer of silicon dioxide is a dielectric material so it will act as a capacitor where one of its electrodes will be replaced by the semiconductor.

• As we apply positive voltage at the MOS composition, it will alter the charge distribution in the semiconductor. With the addition of positive voltage, the holes present under the oxide layer will encounter a force and allow the holes to move downward. The depletion region will be accumulated by the bound negative charges which are connected with acceptors atoms.
• The accumulation of electrons at the p-type substrate increases the conductivity between the source and drain. At this point the electrical properties of p-type substrate will consistently inverts, allowing the substrate to change into n-type material.
• The addition of positive voltage at the gate terminal will control the movement of electron in the conducting channel between source and drain. The more we increase the voltage the more it will increase the overall width of conducting channel, hence ultimately increases the conductivity of transistor.
• Main advantage of this transistor over other bipolar junction transistor is that it needs no input current to handle the load current.

Maximum Ratings 5n50

• Drain-Source voltage is 500 V.
• Drain current is 5 A.
• Power dissipation is 38, 54, 125 W for different composition of MOSFET that comes  in three forms TO-220, TO-252, TO-262 repectively.

Applications

• 5n50 is an N-Channel MOSFET which is widely used in many electronic applications.
• It is used in active power factor correction.
• The ability of transistor to change its conductivity by the addition of positive voltage at the gate terminal is used for efficient amplification purpose.
• It is useful in many efficient power supplies where high switching is required.
• Some electronic lamps use this MOSFET for driving purpose.