1N5817 Schottky Diode Datasheet, Pinout, Features and Applications

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Introduction to 1N5817

• The 1n5817 is a Schottky diode, also known as a hot-carrier diode, used in extremely fast switching applications.
• It comes in the DO-201AD package and contains low forward drop voltage and high forward surge capability.

• In some applications, less power dissipation is required, in that case, MOSFETs are used in place of Schottky diodes.
• Schottky diode is also known as a hot-carrier diode due to the low electronic energy it exhibits in an unbiased condition.
• This low energy develops the barrier that blocks the movement of electrons. This formation of the barrier is the reason Schottky diodes are also known as hot-carrier diodes.

• Both Schottky diode and regular diode are the same in terms of current flow i.e. both allow current flow in one direction only and blocks it in the opposite direction.
• But these diodes are different when it comes to the voltage needed to turn on these diodes. Both diodes get 2V DC source voltage, but the Schottky diode needs only 0.3V, where 1.7V is left behind to power up the diode. And normal diode needs 0.7V, where 1.3V is left out to power up the diode.

1N5817 Datasheet

1N5817 Pinout

• This power diode comes with two terminals known as anode and cathode. Both terminals are used for the external connection with the electrical circuit.

• The anode side is positive and the cathode side is negative. The current enters the diode from the anode terminal and it leaves the diode from the cathode terminal.
• And current flows from the anode terminal to the cathode terminal. The diode only allows the current flow in one direction only i.e. from anode to cathode. It blocks the current flow from the cathode to the anode terminal.

1N5817 Features

• Exhibits small conduction losses.
• 1n5817 is highly efficient.
• Well protected against overvoltage.
• Used in extremely fast switching.
• Available in package DO-201AD.
• Contains high surge capability.

• Contains low forward drop voltage.

1n5817 Schottky Diode Construction

• The 1n5817 is constructed when the semiconductor material is mixed with the metal that creates the barrier.
• When the metals like chromium, platinum, tungsten, and molybdenum are combined with the n-type semiconductor material, it results in the formation of Schottky diode. The n-type semiconductor is the material where electrons operate as a major charge carriers and holes work as minority carriers.
• The Schottky diode contains two terminals called anode and cathode. The anode side is positive that is composed of metal material and the cathode side is negative that is made-up of semiconductor material. The current flows from the positive anode metal side to the cathode negative semiconductor side. Plus, the current enters the diode from the anode side and it leaves the diode from the cathode terminal.
• Both n-type and p-type semiconductor material can be used to work as a cathode terminal in Schottky diode, but n-type materials are preferred over p-type material because the later comes with low drop voltage.
• The forward drop voltage of the Schottky diode main depends on the nature of metal and semiconductor material used to form the barrier.

1N5817 Applications

• Incorporated in sample-and-hold circuits.
• Used in high-frequency and low voltage inverters.
• Employed in polarity protection and DC/DC converters applications.
• Used in freewheeling and logic circuits.
• Used for signal detection and extremely fast switching applications.
• Incorporated in solar systems.
• Used to control the electronic charge.
• Employed in radio frequency applications.