Hi Friends! I welcome you on board. Happy to see you around. In this post today, I’ll document a detailed guide on the PCB manufacturing process.
PCB is hands down a crucial part of modern electronics. From cell phones and digital clocks to remote control and television sets, you will find inside a printed circuit board that connects the electrical components through sophisticated layers of copper traces. These electrical copper traces help in the flow of current through the connected components.
<img src="https://images.theengineeringprojects.com/image/main/2020/ ...
Hi Friends! I welcome you on board. Thank you for clicking this read. In this post today, I’ll document the Introduction to D13003K.
The D13003K is an NPN silicon transistor mainly employed for switching and amplification purposes. It comes with a power dissipation of around 50W which demonstrates the amount of energy this device releases during the functioning of this device. As this is an NPN transistor as here electrons are the major charge carriers. The collector current is 1.8A which means it can support load under 1.8A. The emitter-base voltage is 9V which means it needs 9V to bias th ...
Hello Fellas! Hope you’re well today. Happy to see you around. In this post today, I’ll walk you through the Introduction to D13007K.
The D13007K is an NPN power transistor mainly used for switching and amplification purpose. This device is made of silicon material and falls under the category of bipolar junction transistors. As this is an NPN transistor so here major charge carriers are electrons. Holes are major carriers in the case of PNP transistors. This is a high voltage high current capability device used in energy-saving lamps. The collector current of this chip is 8A which means it ...
Hi Guys! I welcome you on board. Thank you for clicking this read. In this post today, I’ll walk you through the Introduction to MJE13009.
MJE13009 is a semiconductor device made of silicon material that falls under the category of NPN transistors. This device is mainly used for switching and amplification purposes. The power dissipation of this device is 100W and the emitter-base voltage is 9V which is the amount of voltage needed to bias the device.
I suggest you read this post all the way through as I’ll describe the complete Introduction to MJE13009 covering datasheet, pinout, featur ...
Hi Friends! Hope you’re well today. I welcome you on board. In this post today, I’ll demonstrate the Introduction to MJE13003.
MJE13003 is an NPN silicon transistor mainly used for high-speed high voltage power switching applications. This chip is a three-terminal device where a small current at one terminal is used to produce a large current at the remaining terminals. The collector current is 1.5A which projects this device can support load up to 1.5A.
I suggest you buckle up as I’ll describe the complete Introduction to MJE13003 covering datasheet, pinout, working principle, applicati ...
Hello Folks! I welcome you on board. Happy to see you around. In this post today, I’ll walk you through the Introduction to D13009K.
D13009K is a high voltage fast switching power transistor that falls under the category of NPN transistors. The collector current of this device is 12A which projects it can endure load under 12A. This chip is mainly used in amplification and switching applications. The small current change at one pair of terminals is used to produce a large current change across the remaining terminals. The power dissipation is 100W which features the amount of power this ...
Hello Everyone! Happy to see you around. Thank you for clicking this read. In this post today, I’ll document the Introduction to MJE13007.
MJE13007 is an NPN bipolar junction transistor that is a semiconductor device made of silicon material. This chip is mainly used for amplification and switching purposes. The collector-base voltage is 700V while the collector-emitter voltage is 400V. The power dissipation at temp 25C is 80W. This means 80W is released during the working of this device. This device can support load up to 8A because the current at the collector side is 8A.
I suggest you ...
Hi Guys! I welcome you on board. Thank you for clicking this read. In this post today, I’ll walk you through the Introduction to MJE13005.
The MJE13005 is a high speed and high voltage power transistor that belongs to the NPN transistor family. This device can support load up to 4A and the emitter-base voltage is 9V which is the voltage required to bias the device and start the transistor action.
I suggest you read this post all the way through as I’ll detail the complete Introduction to MJE13005 covering datasheet, pinout, features, and applications.
Let’s get started.
Introduction ...