Hello Friends! Hope you’re well today. I welcome you on board. In this post today, I’ll walk you through the Introduction to IRF730.
The IRF730 is an n-channel MOSFET where major charge carriers are electrons and conduction in the transistor is carried out due to the motion of these electrons. It comes with a TO-220 package where the drain-to-source breakdown voltage is 400V and power dissipation is 100W.
I suggest you read this post all the way through as I’ll be discussing the complete Introduction to IRF730 covering datasheet, pinout, features, power ratings, equivalent, and applications.
Let’s jump right in.
Introduction to IRF730
- The IRF730 is an n-channel MOSFET mainly used for switching and amplification applications in the electrical circuits.
- The MOSFET stands for Metal Oxide Silicon Field Effect Transistor also known as IGFET Insulated Gate Field Effect Transistor that is generated by the controlled oxidation of a semiconductor material like silicon.
- IRF730 MOSFET is a three-terminal device composed of gate (G) drain (D) and source (S). The current between two drain and source terminals is controlled by the voltage applied at the gate pin. The gate pin acts like a control valve through which the conduction of current is controlled between two terminals.
- The IRF730 is an n-channel MOSFET where major charge carriers are electrons and current conduction is due to the motion of these electrons in contrast to the p-channel MOSFET where conduction is carried out due to the motion of holes.
- Basic building element of modern electronics, MOSFET is introduced in 1959 in Bell Labs by Mohemed M Atalla and Dawn Kahng. MOSFETs are created to overcome the limitations by FETs like moderate input impedance, high drain resistance, and slower operation.
- This N-channel MOSFET is a voltage-controlled device in contrast to BJT (bipolar junction transistor) that are current-controlled devices.
- In MOSFET current starts flowing between the drain and source terminals, when we apply the voltage at the gate pin.
- The n-channel MOSFETs are commonly called NMOS. And the symbol for the n-channel MOSFET is given below.
- MOSFETs are compared to BJTs in terms of low loss and high-speed operation.
- They are divided into two types in terms of polarity i.e. n-type and p-type and are further divided into two types i.e. enhancement type normally OFF where the voltage at the gate terminal is zero and the depletion type with normally ON.
- The enhancement type is popular and is commonly preferred over depletion type MOSFET.
Before you use this component into your electrical project, scan through the datasheet of the device that details the main characteristics of the component. You can download the datasheet of IRF730 by clicking the link below.
The IRF730 is an N-channel MOSFET that comes with three terminals named
- The current between source and drain is controlled by the gate terminal when we apply voltage on the gate terminal.
- The following figure shows the pinout diagram of IRF730 MOSFET.
- Generally, the MOSFET is a four-terminal component with a Source (S), gate (G), Drain (D), and a Body (B) / Substrate. The body area is always attached to the source terminal thus the MOSFET works as a three-terminal device.
- Type: n-channel MOSFET
- Maximum Junction Temperature = 150 C
- Maximum Gate-to-Source Voltage = 20 V
- Drain-to-Source Breakdown Voltage = 400 V
- Power Dissipation = 100 W
- Maximum Drain-Source On-State Resistance = 1.0 Ohm
- Total Gate Charge = 18 nC
- Drain-source capacitance = 800 pF
- Maximum Drain Current = 5.5 A
- Package = TO-220AB
The following are the equivalent to IRF730.
While working with the alternatives, make sure you double-check the pinout of alternatives. The pinout of the alternatives might differ from the pinout of IRF730.
- Employed in switching and amplifying applications.
- Used in high-efficiency DC to DC converters.
- Used in motor control and UPS.
That was all about the Introduction to IRF730. If you have any questions, you can ask me in the section below, I’d love to help you according to the best of my expertise. Feel free to keep us updated with your valuable feedback and suggestions and help improve the quality of our content. Thank you for reading the article.