Hey Guys! Hope you are doing well. I always strive to keep your technical needs and requirements quite in line with valuable information that helps you excel and thrive in engineering and technology. Today, I’ll unlock the detailed Introduction to S8050 that is an NPN Epitaxial Silicon Transistor mainly used for push-pull amplification and general purpose switching applications.
It is a low voltage and high current transistor, featuring collector current up to 700 mA and Collector-Emitter voltage around 25 V.
I’ll try to cover each and everything related to S8050, so you don’t have to scratch your head browsing the whole internet and find all the information in one place. Let’s dive in and kick off the nitty-gritty of this transistor.
Introduction to S8050
S8050 is an NPN Epitaxial Silicon Transistor that comes with low voltage and high current capabilities. It proves to be a bright spot for push-pull amplification and general purpose switching applications.
- This transistor mainly contains three terminals known as an emitter, base, and collector that are used for the external connection with the electronic circuits.
These terminals are different in terms of doping concentration where emitter terminal is highly doped as compared to base and collector terminals.
- The base terminal is lightly doped and the collector terminal is moderately doped where former controls the number of electrons and later collects the number of electrons from the base terminal. The small current at one terminal at one terminal is used to control large current at other terminals.
This transistor incorporates three layers where one P-doped semiconductor layer is encapsulated between the other two N-doped layers. The P-doped layer represents the base terminal while other two layers represent emitter and collector respectively.
- There are two types of transistors known as Unipolar Transistor and Bipolar Junction Transistors. The S8050 falls under the category of Bipolar Junction Transistor – as the name suggests it comes with two charge carriers: electrons and holes, however, electrons are the major charge carriers.
This transistor features two PN junctions: emitter-base junction that is forward biased and the collector-base junction that is reverse biased.
- It is important to note that, S8050 must be operating in a forward biased mode for a better performance. If a transistor is not forward biased, there will be no collector current, no matter how much voltage is applied at the base terminal.
The amplification is carried out a simple way when a voltage is applied at the base terminal, transistor draws small current which is then used to control large current at other terminals.
S8050 mainly consists of three terminals.
Following shows the pinout of this transistor.
The electron movement is mainly triggered by the voltage applied at the base terminal, resulting in the diffusion of electrons from the base to collector terminal.
- As the voltage is applied the electron from emitter terminal triggers and enters the base terminal, combining with the hole already present in the base terminal and the resulting pair disappears.
The number of electrons entering the base terminal from the emitter is greater than the number of holes diffusing into the emitter region that’s why electrons are major charge carriers in case of NPN transistor.
- The base terminal is unable to handle all electrons entering it, subsequently, electrons move from the base to collector terminal.
S8050 Circuit Diagram
Following figure shows the circuit diagram of the S8050.
In this NPN transistor, electrons are main charge carriers, unlike PNP transistor where holes are major charge carriers.
- The base is more positive with respect to the emitter and the voltage on the collector must also be more positive than the base.
The collector is made physically larger than the base for two reasons: allowing a collector to deal with more heat without damage and increasing the chance of carriers that enter the collector terminal.
- Two current gain factors: common-emitter current gain and common-base current gain play a vital role to determine the characteristic of the transistor.
The common-emitter current gain is a ratio between collector current and base current. This is called Beta, denoted by β, and more often than not ranges between 20 to 1000, however, the standard value is taken as 200.
- Similarly common-base current gain is a ratio between collector current and emitter current. It is called alpha, denoted by α, and its value mainly ranges between 0.95 to 0.99, however, most of the time its value is taken as unity.
S8050 Absolute Maximum Ratings
Following figure shows the absolute maximum ratings of S8050.
- These are the stress ratings which if exceed from the absolute maximum ratings, can damage the device at large, which ultimately affect the project performance.
These ratings are determined on the basis of the maximum junction temperature of 150 °C.
- Additionally, if ratings are applied for a maximum period of time above normal operating conditions, they can affect the device reliability.
- This NPN transistor is mainly used for push-pull amplification.
- Some general purpose switching applications feature this transistor, aiming to control large current with a small current.
That’s all for now. I hope I have given you everything you needed to know about S8050. If you are unsure or have any question, you can ask me in the comment section below. I’d love to help you the best way I can. You are most welcome to keep us updated with your valuable suggestions, they help us provide you quality work. Thanks for reading the article.